MOSFETs | N-Channel | P-Channel | RS
Logga in / Registrera dig för att få tillgång till dina förmåner
Senaste sökningar

    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18689 Produkter som visas för MOSFETs

    • RS-artikelnummer 541-1045
    • Tillv. art.nr IRF9620PBF
    Varje
    12,54 kr
    Vishay
    P
    3.5 A
    200 V
    1.5 Ω
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    40 W
    -
    Single
    10.41mm
    +150 °C
    1
    Si
    22 nC @ 10 V
    4.7mm
    • RS-artikelnummer 273-2751
    • Tillv. art.nr IGO60R070D1AUMA2
    Var (i en rulle med 800)
    80,66 kr
    Infineon
    -
    60 A
    600 V
    -
    DSO
    -
    -
    Surface Mount
    -
    20
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    GaN
    -
    -
    Varje (levereras i ett rör)
    72,80 kr
    IXYS
    N
    96 A
    200 V
    24 mΩ
    TO-247
    HiperFET, Polar
    5V
    Through Hole
    -
    3
    -20 V, +20 V
    Enhancement
    600 W
    -
    Single
    16.26mm
    +175 °C
    1
    Si
    145 nC @ 10 V
    5.3mm
    • RS-artikelnummer 831-2806P
    • Tillv. art.nr IRF2807ZSTRLPBF
    Varje (levereras i en rulle)
    19,807 kr
    Infineon
    N
    89 A
    75 V
    9.4 mΩ
    D2PAK (TO-263)
    HEXFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    170 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    71 nC @ 10 V
    9.65mm
    • RS-artikelnummer 543-0018
    • Tillv. art.nr IRF9510PBF
    Varje
    7,95 kr
    Vishay
    P
    4 A
    100 V
    1.2 Ω
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    43 W
    -
    Single
    10.41mm
    +175 °C
    1
    Si
    8.7 nC @ 10 V
    4.7mm
    • RS-artikelnummer 188-8473
    • Tillv. art.nr STB12NM50T4
    Var (i ett paket med 5)
    59,404 kr
    STMicroelectronics
    N
    12 A
    -
    350 mΩ
    D2PAK (TO-263)
    -
    5V
    Surface Mount
    3V
    3
    ±30 V
    Enhancement
    160 W
    -
    Single
    10.4mm
    +150 °C
    1
    -
    28 nC @ 10 V
    9.35mm
    • RS-artikelnummer 671-0359P
    • Tillv. art.nr FDC658P
    Varje (levereras i en rulle)
    5,766 kr
    onsemi
    P
    4 A
    30 V
    50 mΩ
    SOT-23
    PowerTrench
    -
    Surface Mount
    1V
    6
    -20 V, +20 V
    Enhancement
    1.6 W
    -
    Single
    3mm
    +150 °C
    1
    Si
    8 nC @ 5 V
    1.7mm
    • RS-artikelnummer 919-4208
    • Tillv. art.nr SI2319CDS-T1-GE3
    Var (i en rulle med 3000)
    2,211 kr
    Vishay
    P
    4.4 A
    40 V
    108 mΩ
    SOT-23
    -
    -
    Surface Mount
    1.2V
    3
    -20 V, +20 V
    Enhancement
    2.5 W
    -
    Single
    3.04mm
    +150 °C
    1
    Si
    13.6 nC @ 10 V
    1.4mm
    • RS-artikelnummer 671-1074P
    • Tillv. art.nr NDS0610
    Varje (levereras i en rulle)
    2,397 kr
    onsemi
    P
    120 mA
    60 V
    10 Ω
    SOT-23
    -
    -
    Surface Mount
    1V
    3
    -20 V, +20 V
    Enhancement
    360 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    1.8 nC @ 10 V
    1.3mm
    Varje (levereras i en rulle)
    4,85 kr
    Vishay
    N, P
    190 mA, 300 mA
    60 V
    3 Ω, 8 Ω
    SC-89-6
    -
    -
    Surface Mount
    1V
    6
    -20 V, +20 V
    Enhancement
    250 mW
    -
    Isolated
    1.7mm
    +150 °C
    2
    Si
    1700 nC @ 15 V, 750 nC @ 4.5 V
    1.7mm
    • RS-artikelnummer 671-5064
    • Tillv. art.nr FQP27P06
    Var (i ett paket med 5)
    21,604 kr
    onsemi
    P
    27 A
    60 V
    70 mΩ
    TO-220AB
    QFET
    4V
    Through Hole
    2V
    3
    -25 V, +25 V
    Enhancement
    120 W
    -
    Single
    10.1mm
    +175 °C
    1
    Si
    33 nC @ 10 V
    4.7mm
    • RS-artikelnummer 898-6927P
    • Tillv. art.nr IPW65R080CFDAFKSA1
    Varje (levereras i ett rör)
    117,66 kr
    Infineon
    N
    43 A
    700 V
    80 mΩ
    TO-247
    CoolMOS™ CFD
    -
    Through Hole
    -
    3
    -30 V, +30 V
    Enhancement
    391 W
    -
    Single
    16.13mm
    +150 °C
    1
    Si
    167 nC @ 10 V
    5.21mm
    • RS-artikelnummer 827-4072P
    • Tillv. art.nr IRFR5505TRPBF
    Varje (levereras i en rulle)
    8,49 kr
    Infineon
    P
    18 A
    55 V
    110 mΩ
    DPAK (TO-252)
    HEXFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    57 W
    -
    Single
    6.73mm
    +150 °C
    1
    Si
    32 nC @ 10 V
    6.22mm
    • RS-artikelnummer 223-6213P
    • Tillv. art.nr R6050JNZC17
    Varje (levereras i ett rör)
    72,58 kr
    ROHM
    N
    50 A
    600 V
    0.083 Ω
    TO-3PF
    -
    7V
    Surface Mount
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    • RS-artikelnummer 671-0387P
    • Tillv. art.nr FDMC2523P
    Varje (levereras i en rulle)
    14,192 kr
    onsemi
    P
    1.8 A
    150 V
    3.6 Ω
    MLPAK33
    QFET
    -
    Surface Mount
    3V
    8
    -30 V, +30 V
    Enhancement
    42 W
    -
    Single
    3mm
    +150 °C
    1
    Si
    6.2 nC @ 10 V
    3mm
    • RS-artikelnummer 268-8361
    • Tillv. art.nr SQ4917CEY-T1_GE3
    Var (i ett paket med 5)
    18,01 kr
    Vishay
    P
    8 A
    60 V
    -
    SO-8
    -
    -
    Surface Mount
    -
    8
    -
    Enhancement
    -
    -
    -
    -
    -
    4
    Silicon
    -
    -
    Var (i ett paket med 5)
    41,676 kr
    Infineon
    N
    120 A
    80 V
    0.0028 O
    TO-220
    OptiMOS™ -T2
    4V
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    • RS-artikelnummer 214-4445
    • Tillv. art.nr IRF2907ZSTRLPBF
    Var (i en rulle med 800)
    19,354 kr
    Infineon
    N
    170 A
    75 V
    0.0045 Ω
    D2PAK (TO-263)
    HEXFET
    4V
    Surface Mount
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    • RS-artikelnummer 192-3386
    • Tillv. art.nr CAB450M12XM3
    Varje
    10 217,00 kr
    Wolfspeed
    -
    -
    1200 V
    4.6 mΩ
    -
    -
    3.6V
    -
    1.8V
    -
    -4 V, 19 V
    -
    50 mW
    -
    -
    80mm
    +175 °C
    1
    SiC
    1330 nC @ 4/15V
    53mm
    • RS-artikelnummer 822-2545P
    • Tillv. art.nr DMN2005K-7
    Varje (levereras i en rulle)
    2,136 kr
    DiodesZetex
    N
    600 mA
    20 V
    3.5 Ω
    SOT-23
    -
    0.9V
    Surface Mount
    -
    3
    -10 V, +10 V
    Enhancement
    350 mW
    -
    Single
    3mm
    +150 °C
    1
    Si
    -
    1.4mm
    Resultat per sida