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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18682 Produkter som visas för MOSFETs

    • RS-artikelnummer 903-4074P
    • Tillv. art.nr 2N7000-D26Z
    Varje (levereras som en tejp)
    1,995 kr
    onsemi
    N
    200 mA
    60 V
    9 Ω
    TO-92
    -
    -
    Through Hole
    0.8V
    3
    -40 V, +40 V
    Enhancement
    400 mW
    -
    Single
    5.2mm
    +150 °C
    1
    Si
    -
    4.19mm
    • RS-artikelnummer 812-0672P
    • Tillv. art.nr IRFZ24PBF
    Varje (levereras i ett rör)
    12,835 kr
    Vishay
    N
    17 A
    60 V
    100 mΩ
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    60 W
    -
    Single
    -
    +175 °C
    1
    Si
    25 nC @ 10 V
    -
    Var (i ett paket med 5)
    18,816 kr
    onsemi
    N
    12 A
    40 V
    28 mΩ
    Power 33
    PowerTrench
    -
    Surface Mount
    1V
    8
    -12 V, +12 V
    Enhancement
    1.9 W
    -
    Isolated
    3mm
    +150 °C
    2
    Si
    12 nC @ 5 V, 21 nC @ 10 V
    3mm
    • RS-artikelnummer 541-1685
    • Tillv. art.nr IRFZ14PBF
    Varje
    10,84 kr
    Vishay
    N
    10 A
    60 V
    200 mΩ
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    43 W
    -
    Single
    10.41mm
    +175 °C
    1
    Si
    11 nC @ 10 V
    4.7mm
    Varje (levereras i ett rör)
    113,46 kr
    IXYS
    N
    60 A
    500 V
    100 mΩ
    TO-247
    HiperFET, Polar3
    5V
    Through Hole
    -
    3
    -30 V, +30 V
    Enhancement
    1.04 kW
    -
    Single
    16.26mm
    +150 °C
    1
    Si
    96 nC @ 10 V
    5.3mm
    • RS-artikelnummer 708-5140P
    • Tillv. art.nr IRF9520PBF
    Varje (levereras i ett rör)
    12,835 kr
    Vishay
    P
    6.8 A
    100 V
    600 mΩ
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    60 W
    -
    Single
    10.41mm
    +175 °C
    1
    Si
    18 nC @ 10 V
    4.7mm
    Var (i ett paket med 10)
    10,942 kr
    STMicroelectronics
    N
    6 A
    600 V
    -
    TO-220
    SuperMESH
    -
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    -
    -
    -
    • RS-artikelnummer 354-6414
    • Tillv. art.nr SPW20N60S5FKSA1
    Varje
    69,98 kr
    Infineon
    N
    20 A
    600 V
    190 mΩ
    TO-247
    CoolMOS S5
    5.5V
    Through Hole
    3.5V
    3
    -20 V, +20 V
    Enhancement
    208 W
    -
    Single
    15.9mm
    +150 °C
    1
    Si
    79 nC @ 10 V
    5.3mm
    • RS-artikelnummer 154-958P
    • Tillv. art.nr ZXM61N02FTA
    Varje (levereras i en rulle)
    3,71 kr
    DiodesZetex
    N
    1.7 A
    20 V
    180 mΩ
    SOT-23
    -
    -
    Surface Mount
    0.7V
    3
    -12 V, +12 V
    Enhancement
    806 mW
    -
    Single
    3.05mm
    +150 °C
    1
    Si
    3.4 nC @ 4.5 V
    1.4mm
    Var (i ett paket med 10)
    11,267 kr
    STMicroelectronics
    N
    40 A
    30 V
    25 mΩ
    PowerFLAT 5 x 6
    -
    1.5V
    Surface Mount
    1V
    8
    ±22 V
    Enhancement
    50 W
    -
    Single
    6.2mm
    +175 °C
    1
    -
    4.5 nC @ 4.5 V
    5.1mm
    • RS-artikelnummer 541-2515
    • Tillv. art.nr IRF9630PBF
    Varje
    19,38 kr
    Vishay
    P
    6.5 A
    200 V
    800 mΩ
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    74 W
    -
    Single
    10.41mm
    +150 °C
    1
    Si
    29 nC @ 10 V
    4.7mm
    • RS-artikelnummer 708-5159
    • Tillv. art.nr IRF9530PBF
    Var (i ett paket med 5)
    18,548 kr
    Vishay
    P
    12 A
    100 V
    300 mΩ
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    88 W
    -
    Single
    10.41mm
    +175 °C
    1
    Si
    38 nC @ 10 V
    4.7mm
    • RS-artikelnummer 787-9042P
    • Tillv. art.nr SI2319CDS-T1-GE3
    Varje (levereras i en rulle)
    5,421 kr
    Vishay
    P
    4.4 A
    40 V
    108 mΩ
    SOT-23
    -
    -
    Surface Mount
    1.2V
    3
    -20 V, +20 V
    Enhancement
    2.5 W
    -
    Single
    3.04mm
    +150 °C
    1
    Si
    13.6 nC @ 10 V
    1.4mm
    • RS-artikelnummer 903-4074
    • Tillv. art.nr 2N7000-D26Z
    Var (i ett paket med 100)
    1,995 kr
    onsemi
    N
    200 mA
    60 V
    9 Ω
    TO-92
    -
    -
    Through Hole
    0.8V
    3
    -40 V, +40 V
    Enhancement
    400 mW
    -
    Single
    5.2mm
    +150 °C
    1
    Si
    -
    4.19mm
    • RS-artikelnummer 827-0503P
    • Tillv. art.nr DMP3099L-7
    Varje (levereras i en rulle)
    0,613 kr
    DiodesZetex
    P
    2.9 A
    30 V
    99 mΩ
    SOT-23
    -
    2.1V
    Surface Mount
    -
    3
    -20 V, +20 V
    Enhancement
    1.08 W
    -
    Single
    3mm
    +150 °C
    1
    Si
    11 nC @ 10 V
    1.4mm
    Var (i ett paket med 10)
    14,784 kr
    Vishay Siliconix
    P
    100 A
    30 V
    5 mΩ
    DPAK (TO-252)
    TrenchFET
    2.5V
    Surface Mount
    1.5V
    3
    ±20 V
    Enhancement
    136 W
    -
    Single
    6.73mm
    +175 °C
    1
    Si
    186 nC @ 10 V
    2.38mm
    • RS-artikelnummer 541-0014
    • Tillv. art.nr IRF640NPBF
    Varje
    8,54 kr
    Infineon
    N
    18 A
    200 V
    150 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    150 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    67 nC @ 10 V
    4.83mm
    • RS-artikelnummer 540-9799
    • Tillv. art.nr IRF4905PBF
    Varje
    18,96 kr
    Infineon
    P
    74 A
    55 V
    20 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    200 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    180 nC @ 10 V
    4.69mm
    Varje (levereras i ett rör)
    359,41 kr
    IXYS
    N
    61 A
    500 V
    85 mΩ
    SOT-227
    HiperFET, Polar
    5.5V
    Screw Mount
    -
    4
    -30 V, +30 V
    Enhancement
    700 W
    -
    Single
    38.23mm
    +150 °C
    1
    Si
    150 nC @ 10 V
    25.42mm
    • RS-artikelnummer 759-8989P
    • Tillv. art.nr FDB44N25TM
    Varje (levereras i en rulle)
    27,105 kr
    onsemi
    N
    44 A
    250 V
    69 mΩ
    D2PAK (TO-263)
    UniFET
    -
    Surface Mount
    3V
    3
    -
    Enhancement
    307 W
    -
    Single
    10.67mm
    +150 °C
    1
    Si
    47 nC @ 10 V
    11.33mm
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