onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33
- RS-artikelnummer:
- 806-3504
- Tillv. art.nr:
- FDMC8030
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
103,94 kr
(exkl. moms)
129,925 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 370 enhet(er) från den 29 december 2025
- Sista 2 150 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 25 | 20,788 kr | 103,94 kr |
| 30 - 145 | 18,57 kr | 92,85 kr |
| 150 - 745 | 16,396 kr | 81,98 kr |
| 750 - 1495 | 14,134 kr | 70,67 kr |
| 1500 + | 12,118 kr | 60,59 kr |
*vägledande pris
- RS-artikelnummer:
- 806-3504
- Tillv. art.nr:
- FDMC8030
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Dual N-Channel Power Trench MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | Power 33 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.9W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | Lead-Free and RoHS | |
| Width | 3 mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Dual N-Channel Power Trench MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type Power 33 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.9W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals Lead-Free and RoHS | ||
Width 3 mm | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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