STMicroelectronics Single STripFET 1 Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerFLAT STL40DN3LLH5
- RS-artikelnummer:
- 188-8491
- Tillv. art.nr:
- STL40DN3LLH5
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
109,09 kr
(exkl. moms)
136,36 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 20 juli 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 10,909 kr | 109,09 kr |
| 50 - 90 | 10,371 kr | 103,71 kr |
| 100 - 240 | 9,33 kr | 93,30 kr |
| 250 - 490 | 8,40 kr | 84,00 kr |
| 500 + | 7,974 kr | 79,74 kr |
*vägledande pris
- RS-artikelnummer:
- 188-8491
- Tillv. art.nr:
- STL40DN3LLH5
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | STripFET | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.95mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Length | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series STripFET | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Height 0.95mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Length 6.2mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Low on-resistance
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications
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