JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Beskrivning Pris Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS-artikelnummer 145-5347
Tillv. art.nrJ113
VarumärkeON Semiconductor
0,936 kr
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N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-artikelnummer 806-1766
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VarumärkeON Semiconductor
2,564 kr
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N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-artikelnummer 761-3688
Tillv. art.nrMMBFJ201
VarumärkeON Semiconductor
2,527 kr
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N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS-artikelnummer 760-3126
Tillv. art.nr2SK209-Y(TE85L,F)
VarumärkeToshiba
3,34 kr
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N 1.2 → 3.0mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS-artikelnummer 166-1840
Tillv. art.nrMMBFJ201
VarumärkeON Semiconductor
0,892 kr
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N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS-artikelnummer 807-5201
Tillv. art.nrBSR58
VarumärkeON Semiconductor
1,206 kr
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N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS-artikelnummer 166-2319
Tillv. art.nrBSR58
VarumärkeON Semiconductor
0,704 kr
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N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS-artikelnummer 124-1385
Tillv. art.nrJ112
VarumärkeON Semiconductor
1,003 kr
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N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-artikelnummer 112-4185
Tillv. art.nrPMBF4393,215
VarumärkeNXP
3,21 kr
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N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 163-2023
Tillv. art.nr2SK932-22-TB-E
VarumärkeON Semiconductor
1,703 kr
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N 7.3 → 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS-artikelnummer 792-5170
Tillv. art.nr2SK932-22-TB-E
VarumärkeON Semiconductor
4,231 kr
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N 7.3 → 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS-artikelnummer 806-1757
Tillv. art.nrJ112
VarumärkeON Semiconductor
2,788 kr
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N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-artikelnummer 166-2021
Tillv. art.nrJ109
VarumärkeON Semiconductor
1,418 kr
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N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS-artikelnummer 864-7840
Tillv. art.nrMMBFJ175LT1G
VarumärkeON Semiconductor
3,206 kr
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P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS-artikelnummer 103-8160
Tillv. art.nrPMBF4393,215
VarumärkeNXP
1,561 kr
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N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-artikelnummer 806-1750
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VarumärkeON Semiconductor
3,065 kr
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N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS-artikelnummer 163-0037
Tillv. art.nrMMBFJ175LT1G
VarumärkeON Semiconductor
1,128 kr
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P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS-artikelnummer 760-3123
Tillv. art.nr2SK208-R(TE85L,F)
VarumärkeToshiba
3,205 kr
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N 0.3 → 0.75mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS-artikelnummer 169-7868
Tillv. art.nrDSK5J01R0L
VarumärkePanasonic
0,469 kr
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N 5 → 12mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS-artikelnummer 749-8265
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VarumärkePanasonic
0,528 kr
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N 1 → 3mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
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