Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23
- RS-artikelnummer:
- 826-9412
- Tillv. art.nr:
- BSS316NH6327XTSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rulle med 250 enheter)*
394,75 kr
(exkl. moms)
493,50 kr
(inkl. moms)
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- 250 enhet(er) är redo att levereras
- Dessutom levereras 7 000 enhet(er) från den 09 januari 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 250 - 250 | 1,579 kr | 394,75 kr |
| 500 - 1000 | 1,499 kr | 374,75 kr |
| 1250 - 2250 | 1,055 kr | 263,75 kr |
| 2500 + | 1,001 kr | 250,25 kr |
*vägledande pris
- RS-artikelnummer:
- 826-9412
- Tillv. art.nr:
- BSS316NH6327XTSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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