Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 28 A, 60 V Enhancement, 8-Pin PDFN56 TSM280NB06LCR

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276,65 kr

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345,80 kr

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25 - 2511,066 kr276,65 kr
50 - 7510,855 kr271,38 kr
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250 - 9759,766 kr244,15 kr
1000 +9,036 kr225,90 kr

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Förpackningsalternativ:
RS-artikelnummer:
216-9709
Tillv. art.nr:
TSM280NB06LCR
Tillverkare / varumärke:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

60V

Series

TSM025

Package Type

PDFN56

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

56W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC

Length

6.1mm

Height

1.1mm

Width

5.1 mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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