Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 44 A, 60 V Enhancement, 8-Pin PDFN56 TSM170N06PQ56
- RS-artikelnummer:
- 216-9700
- Tillv. art.nr:
- TSM170N06PQ56
- Tillverkare / varumärke:
- Taiwan Semiconductor
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
469,85 kr
(exkl. moms)
587,30 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Håller på att utgå
- Slutlig(a) 1 625 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 18,794 kr | 469,85 kr |
| 50 - 75 | 18,435 kr | 460,88 kr |
| 100 - 225 | 16,952 kr | 423,80 kr |
| 250 - 975 | 16,612 kr | 415,30 kr |
| 1000 + | 15,393 kr | 384,83 kr |
*vägledande pris
- RS-artikelnummer:
- 216-9700
- Tillv. art.nr:
- TSM170N06PQ56
- Tillverkare / varumärke:
- Taiwan Semiconductor
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 73.5W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC, RoHS, WEEE | |
| Height | 1.1mm | |
| Length | 6.1mm | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 73.5W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC, RoHS, WEEE | ||
Height 1.1mm | ||
Length 6.1mm | ||
Width 5.1 mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
relaterade länkar
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
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- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
