Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET

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60 897,60 kr

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76 123,20 kr

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RS-artikelnummer:
214-8949
Tillv. art.nr:
AUIRF7675M2TR
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

45W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

5.05 mm

Height

0.74mm

Standards/Approvals

No

Length

6.35mm

Automotive Standard

AEC-Q101

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.

Advanced Process Technology

175°C Operating Temperature

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