Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23 BSS119NH6327XTSA1

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2 040,00 kr

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RS-artikelnummer:
165-5873
Tillv. art.nr:
BSS119NH6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190mA

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

0.6nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Length

2.9mm

Width

1.3 mm

Height

1mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon OptiMOS™ Small Signal MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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