Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90N03S4L02ATMA1

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RS-artikelnummer:
825-9398
Tillv. art.nr:
IPD90N03S4L02ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

175°C

Height

2.3mm

Width

6.22 mm

Length

6.5mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon OptiMOS™ T2 Power MOSFETs


Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

AEC qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green Product (RoHS compliant)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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