Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1
- RS-artikelnummer:
- 214-9055
- Tillv. art.nr:
- IPD90N04S403ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
116,28 kr
(exkl. moms)
145,35 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 17 415 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 60 | 7,752 kr | 116,28 kr |
| 75 - 135 | 7,355 kr | 110,33 kr |
| 150 - 360 | 7,056 kr | 105,84 kr |
| 375 - 735 | 6,743 kr | 101,15 kr |
| 750 + | 6,279 kr | 94,19 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9055
- Tillv. art.nr:
- IPD90N04S403ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 94W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 94W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
It is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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