Infineon OptiMOS Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin PG-TO252-3
- RS-artikelnummer:
- 273-2786
- Tillv. art.nr:
- IPD95R1K2P7ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
103,49 kr
(exkl. moms)
129,36 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 80 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 20,698 kr | 103,49 kr |
| 50 - 95 | 18,794 kr | 93,97 kr |
| 100 - 245 | 17,248 kr | 86,24 kr |
| 250 - 995 | 15,904 kr | 79,52 kr |
| 1000 + | 14,74 kr | 73,70 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2786
- Tillv. art.nr:
- IPD95R1K2P7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a 950V CoolMOS P7 SJ power device. The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best in class performance with state of the art ease of use. Enabling higher power density designs, BOM savings and lower assembly costs. It provides better production yield by reducing ESD related failures.
Less production issues
Fully optimized portfolio
Easy to drive and to parallel
Integrated Zener Diode ESD protection
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