Infineon OptiMOS Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin PG-TO252-3
- RS-artikelnummer:
- 273-2784
- Tillv. art.nr:
- IPD046N08N5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
133,82 kr
(exkl. moms)
167,275 kr
(inkl. moms)
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- Dessutom levereras 280 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 26,764 kr | 133,82 kr |
| 50 - 95 | 24,372 kr | 121,86 kr |
| 100 - 245 | 22,288 kr | 111,44 kr |
| 250 - 995 | 20,564 kr | 102,82 kr |
| 1000 + | 19,174 kr | 95,87 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2784
- Tillv. art.nr:
- IPD046N08N5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel 80V MOSFET. It is an ideal for high frequency switching and synchronous rectification. This MOSFET has 175 degree Celsius operating temperature. This MOSFET qualified according to JEDEC1 for target application and halogen free according to IEC61249 2 21.
RoHS compliant
Pb free lead plating
Excellent gate charge
Very low on resistance
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