Infineon OptiMOS Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin PG-TO252-3 IPD95R1K2P7ATMA1

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16 560,00 kr

(exkl. moms)

20 700,00 kr

(inkl. moms)

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2500 +6,624 kr16 560,00 kr

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RS-artikelnummer:
273-2785
Tillv. art.nr:
IPD95R1K2P7ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

950V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET is a 950V CoolMOS P7 SJ power device. The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best in class performance with state of the art ease of use. Enabling higher power density designs, BOM savings and lower assembly costs. It provides better production yield by reducing ESD related failures.

Less production issues

Fully optimized portfolio

Easy to drive and to parallel

Integrated Zener Diode ESD protection

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