Infineon HEXFET Type N-Channel MOSFET, 81 A, 20 V Enhancement, 2-Pin DirectFET IRF6636TRPBF

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179,96 kr

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224,95 kr

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10 - 4017,996 kr179,96 kr
50 - 9017,091 kr170,91 kr
100 - 24016,386 kr163,86 kr
250 - 49015,658 kr156,58 kr
500 +14,571 kr145,71 kr

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Förpackningsalternativ:
RS-artikelnummer:
222-4739
Tillv. art.nr:
IRF6636TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

20V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

6.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

42W

Typical Gate Charge Qg @ Vgs

18nC

Width

3.95 mm

Length

4.85mm

Height

0.68mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

100% Rg tested Low Conduction and Switching Losses

Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters

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