Infineon HEXFET Type N-Channel MOSFET, 68 A, 60 V Enhancement, 9-Pin DirectFET AUIRF7648M2TR
- RS-artikelnummer:
- 215-2450
- Tillv. art.nr:
- AUIRF7648M2TR
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
204,88 kr
(exkl. moms)
256,10 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 40,976 kr | 204,88 kr |
| 25 - 45 | 36,87 kr | 184,35 kr |
| 50 - 120 | 34,384 kr | 171,92 kr |
| 125 - 245 | 31,964 kr | 159,82 kr |
| 250 + | 29,904 kr | 149,52 kr |
*vägledande pris
- RS-artikelnummer:
- 215-2450
- Tillv. art.nr:
- AUIRF7648M2TR
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a DirectFET M4 package. The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications
Low Rds(on) for Improved Efficiency
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
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