Infineon HEXFET Type N-Channel MOSFET, 68 A, 60 V Enhancement, 9-Pin DirectFET

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88 372,80 kr

(exkl. moms)

110 467,20 kr

(inkl. moms)

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4800 +18,411 kr88 372,80 kr

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RS-artikelnummer:
215-2449
Tillv. art.nr:
AUIRF7648M2TR
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

63W

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a DirectFET M4 package. The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology

Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications

Low Rds(on) for Improved Efficiency

Repetitive Avalanche Capability for Robustness and Reliability

Lead free, RoHS and Halogen free

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