Infineon HEXFET Type N-Channel MOSFET, 345 A, 60 V, 8-Pin DirectFET
- RS-artikelnummer:
- 223-8454
- Tillv. art.nr:
- AUIRF7749L2TR
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 4000 enheter)*
134 184,00 kr
(exkl. moms)
167 728,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 06 juli 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 4000 + | 33,546 kr | 134 184,00 kr |
*vägledande pris
- RS-artikelnummer:
- 223-8454
- Tillv. art.nr:
- AUIRF7749L2TR
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 345A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Maximum Gate Source Voltage Vgs | 60 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 341W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 345A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Maximum Gate Source Voltage Vgs 60 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 341W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon single N-channel HEXFET power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows this MOSFET to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications.
Advanced process technology
Exceptionally small footprint and low profile
High power density
Low parasitic parameters
Dual sided cooling
175°C Operating temperature
Lead free
RoHS compliant
Halogen free
Automotive qualified
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