Infineon HEXFET Type N-Channel MOSFET, 345 A, 60 V, 8-Pin DirectFET AUIRF7749L2TR
- RS-artikelnummer:
- 223-8455
- Tillv. art.nr:
- AUIRF7749L2TR
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
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154,47 kr
(exkl. moms)
193,088 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 77,235 kr | 154,47 kr |
| 10 - 18 | 69,495 kr | 138,99 kr |
| 20 - 48 | 64,905 kr | 129,81 kr |
| 50 - 98 | 61,04 kr | 122,08 kr |
| 100 + | 56,39 kr | 112,78 kr |
*vägledande pris
- RS-artikelnummer:
- 223-8455
- Tillv. art.nr:
- AUIRF7749L2TR
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 345A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 341W | |
| Maximum Gate Source Voltage Vgs | 60 V | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 345A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 341W | ||
Maximum Gate Source Voltage Vgs 60 V | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon single N-channel HEXFET power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows this MOSFET to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications.
Advanced process technology
Exceptionally small footprint and low profile
High power density
Low parasitic parameters
Dual sided cooling
175°C Operating temperature
Lead free
RoHS compliant
Halogen free
Automotive qualified
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