Infineon HEXFET Type N-Channel MOSFET, 21 A, 60 V Enhancement, 6-Pin DirectFET

Antal (1 rulle med 4800 enheter)*

34 089,60 kr

(exkl. moms)

42 614,40 kr

(inkl. moms)

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4800 +7,102 kr34 089,60 kr

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RS-artikelnummer:
215-2447
Tillv. art.nr:
AUIRF7640S2TR
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

7.3nC

Maximum Power Dissipation Pd

30W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon Automotive DirectFET® Power MOSFET series has 60V maximum drain source voltage with 20A maximum continuous drain current in a DirectFET Small Can package. The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology

Optimized for Class D Audio Amplifier and High Speed Switching Applications

Low Rds(on) for Improved Efficiency

Repetitive Avalanche Capability for Robustness and Reliability

Lead free, RoHS and Halogen free

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