STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT SCTL35N65G2V

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157,36 kr

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196,70 kr

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Förpackningsalternativ:
RS-artikelnummer:
213-3942
Tillv. art.nr:
SCTL35N65G2V
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerFLAT

Series

SCTL35N65G2V

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

67mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

417W

Forward Voltage Vf

3.3V

Maximum Operating Temperature

175°C

Length

8.1mm

Height

0.95mm

Width

8.1 mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode

Low capacitance

Source sensing pin for increased efficiency

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