Vishay SiSHA04DN Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SISHA04DN-T1-GE3
- RS-artikelnummer:
- 188-5123
- Tillv. art.nr:
- SISHA04DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
71,14 kr
(exkl. moms)
88,92 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 2 990 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 7,114 kr | 71,14 kr |
| 100 - 240 | 6,388 kr | 63,88 kr |
| 250 - 490 | 5,492 kr | 54,92 kr |
| 500 - 990 | 4,632 kr | 46,32 kr |
| 1000 + | 3,978 kr | 39,78 kr |
*vägledande pris
- RS-artikelnummer:
- 188-5123
- Tillv. art.nr:
- SISHA04DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSHA04DN | |
| Package Type | PowerPAK 1212-8SH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00215Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 0.93mm | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSHA04DN | ||
Package Type PowerPAK 1212-8SH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00215Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 0.93mm | ||
Width 3.3 mm | ||
Automotive Standard No | ||
N-Channel 30 V (D-S) MOSFET.
TrenchFET ® Gen IV power MOSFET
relaterade länkar
- Vishay SiSHA04DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8SH
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS176LDN-T1-GE3
- Vishay SiSS92DN Type N-Channel MOSFET 250 V Enhancement, 8-Pin PowerPAK 1212 SiSS92DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3
- Vishay SiSHA10DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISHA10DN-T1-GE3
- Vishay SiSS52DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3
