Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3

RS-artikelnummer:: 180-8134
Tillv. art.nr:: SI4825DDY-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3

Antal (1 förpackning med 10 enheter)*

87,36 kr

(exkl. moms)

109,20 kr

(inkl. moms)

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Slutlig(a) 2 150 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
10 +	8,736 kr	87,36 kr

*vägledande pris

RS-artikelnummer:: 180-8134
Tillv. art.nr:: SI4825DDY-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	14.9A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	20.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	3.2W
	Typical Gate Charge Qg @ Vgs	29.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Height	1.75mm
	Standards/Approvals	No
	Length	5mm
	Width	6.2 mm
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 14.9A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 20.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 3.2W
	Typical Gate Charge Qg @ Vgs 29.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Height 1.75mm
	Standards/Approvals No
	Length 5mm
	Width 6.2 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has drain-source resistance of 12.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 14.9A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Load Switch

• Notebook Adaptor Switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested