Vishay TrenchFET Type P-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SI7149ADP-T1-GE3
- RS-artikelnummer:
- 818-1393
- Tillv. art.nr:
- SI7149ADP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
160,50 kr
(exkl. moms)
200,62 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 19 augusti 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 180 | 8,025 kr | 160,50 kr |
| 200 - 480 | 7,622 kr | 152,44 kr |
| 500 - 980 | 6,418 kr | 128,36 kr |
| 1000 - 1980 | 6,02 kr | 120,40 kr |
| 2000 + | 5,617 kr | 112,34 kr |
*vägledande pris
- RS-artikelnummer:
- 818-1393
- Tillv. art.nr:
- SI7149ADP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0052Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43.1nC | |
| Maximum Power Dissipation Pd | 48W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 0.74V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0052Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43.1nC | ||
Maximum Power Dissipation Pd 48W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 0.74V | ||
Maximum Operating Temperature 150°C | ||
Height 1.07mm | ||
Length 5.99mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Width 5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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