Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8 SI4497DY-T1-GE3

RS-artikelnummer:: 180-8044
Tillv. art.nr:: SI4497DY-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8 SI4497DY-T1-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

120,40 kr

(exkl. moms)

150,50 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 17 augusti 2026

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Enheter	Per enhet	Per förpackning*
5 - 45	24,08 kr	120,40 kr
50 - 120	19,98 kr	99,90 kr
125 - 245	18,10 kr	90,50 kr
250 - 495	15,636 kr	78,18 kr
500 +	14,47 kr	72,35 kr

*vägledande pris

RS-artikelnummer:: 180-8044
Tillv. art.nr:: SI4497DY-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	129nC
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5mm
	Height	1.75mm
	Width	6.2 mm
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 129nC
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 5W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5mm
	Height 1.75mm
	Width 6.2 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• High current load switch

• Notebook

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested