Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

RS-artikelnummer:: 180-7895
Tillv. art.nr:: SI3421DV-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

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Antal (1 förpackning med 20 enheter)*

97,00 kr

(exkl. moms)

121,20 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Håller på att utgå

Slutlig(a) 3 460 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
20 - 180	4,85 kr	97,00 kr
200 - 480	3,64 kr	72,80 kr
500 - 980	3,153 kr	63,06 kr
1000 - 1980	2,901 kr	58,02 kr
2000 +	2,279 kr	45,58 kr

*vägledande pris

RS-artikelnummer:: 180-7895
Tillv. art.nr:: SI3421DV-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOP
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	19.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.7W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Width	2.98 mm
	Standards/Approvals	No
	Height	1.1mm
	Length	3.1mm
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOP
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 19.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.7W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Width 2.98 mm
	Standards/Approvals No
	Height 1.1mm
	Length 3.1mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• DC/DC converter

• For mobile computing/consumer

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested