Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin TSOP SI5515CDC-T1-GE3

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130,54 kr

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163,18 kr

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RS-artikelnummer:
180-7787
Tillv. art.nr:
SI5515CDC-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

TSOP

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.5nC

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

8 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

3.05mm

Height

1mm

Standards/Approvals

No

Width

1.65 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V and drain-source resistance of 36mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 3.1W. The MOSFET has a continuous drain current of 4A. It has application in load switches for portable devices. MOSFET has been optimized, for lower switching and conduction losses.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

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