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Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

RS-artikelnummer:: 180-7911
Tillv. art.nr:: SI3585CDV-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 20 enheter)*

98,34 kr

(exkl. moms)

122,92 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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2 780 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
20 - 180	4,917 kr	98,34 kr
200 - 480	4,816 kr	96,32 kr
500 - 980	3,691 kr	73,82 kr
1000 - 1980	2,901 kr	58,02 kr
2000 +	2,324 kr	46,48 kr

*vägledande pris

RS-artikelnummer:: 180-7911
Tillv. art.nr:: SI3585CDV-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	3.9A
	Maximum Drain Source Voltage Vds	20V
	Package Type	TSOP
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Typical Gate Charge Qg @ Vgs	3.2nC
	Maximum Power Dissipation Pd	1.4W
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	3.05mm
	Width	1.65 mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 3.9A
	Maximum Drain Source Voltage Vds 20V
	Package Type TSOP
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Typical Gate Charge Qg @ Vgs 3.2nC
	Maximum Power Dissipation Pd 1.4W
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 3.05mm
	Width 1.65 mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converters

• Drivers: motor, solenoid, relay

• Load switch for portable devices

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested