Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP

RS-artikelnummer:: 180-7282
Tillv. art.nr:: SI3585CDV-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP

Antal (1 rulle med 3000 enheter)*

6 507,00 kr

(exkl. moms)

8 133,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 13 april 2026

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per rulle*
3000 +	2,169 kr	6 507,00 kr

*vägledande pris

RS-artikelnummer:: 180-7282
Tillv. art.nr:: SI3585CDV-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type N, Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.9A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.2nC
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	1.4W
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Length	3.05mm
	Height	1mm
	Standards/Approvals	No
	Width	1.65 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Channel Type Type N, Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.9A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.2nC
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 1.4W
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Length 3.05mm
	Height 1mm
	Standards/Approvals No
	Width 1.65 mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converters

• Drivers: motor, solenoid, relay

• Load switch for portable devices

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested