Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V Enhancement, 8-Pin TO-263 IRFS4010TRL7PP
- RS-artikelnummer:
- 130-0998
- Tillv. art.nr:
- IRFS4010TRL7PP
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
88,02 kr
(exkl. moms)
110,02 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- 2 kvar, redo att levereras
- Sista 2 enhet(er) levereras från den 08 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 44,01 kr | 88,02 kr |
| 20 - 48 | 39,705 kr | 79,41 kr |
| 50 - 98 | 36,96 kr | 73,92 kr |
| 100 - 198 | 34,33 kr | 68,66 kr |
| 200 + | 18,985 kr | 37,97 kr |
*vägledande pris
- RS-artikelnummer:
- 130-0998
- Tillv. art.nr:
- IRFS4010TRL7PP
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 380W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 380W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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