Vishay Si4403CDY Type P-Channel MOSFET, 13.4 A, 20 V Enhancement, 8-Pin SOIC SI4403CDY-T1-GE3
- RS-artikelnummer:
- 121-9657
- Tillv. art.nr:
- SI4403CDY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
65,23 kr
(exkl. moms)
81,54 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 440 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 6,523 kr | 65,23 kr |
| 100 - 240 | 6,138 kr | 61,38 kr |
| 250 - 490 | 5,545 kr | 55,45 kr |
| 500 - 990 | 5,225 kr | 52,25 kr |
| 1000 + | 4,892 kr | 48,92 kr |
*vägledande pris
- RS-artikelnummer:
- 121-9657
- Tillv. art.nr:
- SI4403CDY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si4403CDY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 5W | |
| Forward Voltage Vf | -0.66V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Height | 1.55mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si4403CDY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 5W | ||
Forward Voltage Vf -0.66V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Standards/Approvals No | ||
Height 1.55mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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