Vishay Si4431CDY Type P-Channel MOSFET, 7.2 A, 30 V Enhancement, 8-Pin SOIC SI4431CDY-T1-GE3
- RS-artikelnummer:
- 812-3215
- Tillv. art.nr:
- SI4431CDY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
150,64 kr
(exkl. moms)
188,30 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 200 enhet(er) från den 29 december 2025
- Dessutom levereras 660 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 7,532 kr | 150,64 kr |
| 100 - 180 | 6,026 kr | 120,52 kr |
| 200 - 480 | 5,718 kr | 114,36 kr |
| 500 - 980 | 5,432 kr | 108,64 kr |
| 1000 + | 5,113 kr | 102,26 kr |
*vägledande pris
- RS-artikelnummer:
- 812-3215
- Tillv. art.nr:
- SI4431CDY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4431CDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.71V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4.2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Height | 1.55mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4431CDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.71V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4.2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Height 1.55mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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