Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC SI4925DDY-T1-GE3
- RS-artikelnummer:
- 787-9052
- Tillv. art.nr:
- SI4925DDY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
55,91 kr
(exkl. moms)
69,89 kr
(inkl. moms)
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- 75 enhet(er) är redo att levereras
- Dessutom levereras 6 550 enhet(er) från den 01 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 11,182 kr | 55,91 kr |
| 50 - 245 | 10,50 kr | 52,50 kr |
| 250 - 495 | 9,528 kr | 47,64 kr |
| 500 - 1245 | 8,946 kr | 44,73 kr |
| 1250 + | 8,386 kr | 41,93 kr |
*vägledande pris
- RS-artikelnummer:
- 787-9052
- Tillv. art.nr:
- SI4925DDY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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