Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP BSL215CH6327XTSA1

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199,38 kr

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249,24 kr

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Förpackningsalternativ:
RS-artikelnummer:
110-7726
Tillv. art.nr:
BSL215CH6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

20V

Series

OptiMOS

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3nC

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-55°C

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.9mm

Width

1.6 mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Distrelec Product Id

304-36-974

Infineon OptiMOS™ Dual Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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