ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL

RS-artikelnummer:: 687-359
Tillv. art.nr:: AG501EGD3HRBTL
Tillverkare / varumärke:: ROHM

ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL

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Antal (1 längd med 2 enheter)*

37,99 kr

(exkl. moms)

47,488 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 22 januari 2026

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Enheter	Per enhet	Per Längd*
2 - 18	18,995 kr	37,99 kr
20 - 48	16,705 kr	33,41 kr
50 - 198	15,00 kr	30,00 kr
200 - 998	12,12 kr	24,24 kr
1000 +	11,79 kr	23,58 kr

*vägledande pris

RS-artikelnummer:: 687-359
Tillv. art.nr:: AG501EGD3HRBTL
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Drain Source Voltage Vds	-40V
	Package Type	TO-252 (TL)
	Series	AG501EGD3HRB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	145nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	5 V
	Maximum Power Dissipation Pd	142W
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Height	2.3mm
	Length	10.50mm
	Width	6.80 mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Drain Source Voltage Vds -40V
	Package Type TO-252 (TL)
	Series AG501EGD3HRB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 145nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 5 V
	Maximum Power Dissipation Pd 142W
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Height 2.3mm
	Length 10.50mm
	Width 6.80 mm
	Automotive Standard AEC-Q101

Datasheet - AG501EGD3HRBTL

COO (Country of Origin):: JP

The ROHM P channel power MOSFET designed for efficient energy management in automotive systems and various applications. Featuring a maximum Drain-Source voltage of -40V and a continuous drain current capability of up to -80A, this robust device delivers exceptional reliability under demanding operating conditions. With a low on-resistance of just 4.9mΩ, it ensures minimal energy loss, contributing to improved overall system efficiency and thermal performance. This MOSFET is also AEC-Q101 qualified, highlighting its suitability for automotive applications where stringent standards must be met.

Offers low on resistance for reduced power loss and enhanced efficiency

AEC Q101 qualified, ensuring reliability for automotive and critical applications

Avalanche tested to guarantee performance under dynamic conditions

Supports a maximum power dissipation of 142W, compatible with high-performance designs

Wide operating temperature range from -55°C to 175°C, allowing use in diverse environments

Pb free plating and RoHS compliant, meeting modern environmental standards

Optimised packaging specifications, including embedding options for automated assembly

Provides a guaranteed avalanche energy rating, ensuring robust operation during transient events

ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL

GRATIS leverans för online beställningar över 500,00 kr

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