Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263

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31,47 kr

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39,34 kr

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RS-artikelnummer:
653-176
Tillv. art.nr:
SIHB155N60EF-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-263

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Operating Temperature

150°C

Width

9.65 mm

Standards/Approvals

No

Length

2.79mm

Automotive Standard

No

The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for enhanced switching performance. It offers a low figure of merit (FOM), reduced effective capacitance, and optimized thermal behaviour. Designed for server, telecom, SMPS, and power factor correction supplies, it delivers reliable efficiency in demanding power applications.

Pb Free

Halogen free

RoHS compliant

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