Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-263

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Antal (1 rör med 50 enheter)*

630,30 kr

(exkl. moms)

787,90 kr

(inkl. moms)

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50 +12,606 kr630,30 kr

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RS-artikelnummer:
210-4973
Tillv. art.nr:
SiHB186N60EF-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

21nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

156W

Maximum Operating Temperature

150°C

Height

4.06mm

Length

14.61mm

Standards/Approvals

No

Width

9.65 mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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