Sök efter MPN

Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3

RS-artikelnummer:: 903-4504
Tillv. art.nr:: SiHB28N60EF-GE3
Tillverkare / varumärke:: Vishay

Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

137,98 kr

(exkl. moms)

172,48 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 642 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
2 - 18	68,99 kr	137,98 kr
20 - 48	64,85 kr	129,70 kr
50 - 98	62,105 kr	124,21 kr
100 - 198	55,215 kr	110,43 kr
200 +	51,69 kr	103,38 kr

*vägledande pris

RS-artikelnummer:: 903-4504
Tillv. art.nr:: SiHB28N60EF-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	EF
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	123mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	250W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.67mm
	Height	4.83mm
	Width	9.65 mm
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series EF
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 123mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 250W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.67mm
	Height 4.83mm
	Width 9.65 mm
	Automotive Standard No

COO (Country of Origin):: CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3

GRATIS leverans för online beställningar över 500,00 kr

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

relaterade länkar