Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel, P-Channel MOSFET Arrays, 1.8
- RS-artikelnummer:
- 598-568
- Tillv. art.nr:
- TC7920K6-G
- Tillverkare / varumärke:
- Microchip
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(exkl. moms)
111 246,30 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3300 + | 26,969 kr | 88 997,70 kr |
*vägledande pris
- RS-artikelnummer:
- 598-568
- Tillv. art.nr:
- TC7920K6-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N channel, P-Channel | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TC7920 | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | |
| Height | 1mm | |
| Width | 4.15 mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type N channel, P-Channel | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TC7920 | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | ||
Height 1mm | ||
Width 4.15 mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip High voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped MOSFET pairs use an advanced vertical DMOS structure and a proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
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