Microchip Complementary Pair TC6320 1 P-Channel, N channel-Channel MOSFET Arrays, 2 A, 200 V Enhancement, 8-Pin VDFN
- RS-artikelnummer:
- 598-279
- Tillv. art.nr:
- TC6320K6-G
- Tillverkare / varumärke:
- Microchip
Antal (1 rulle med 3300 enheter)*
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(exkl. moms)
78 282,60 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3300 + | 18,978 kr | 62 627,40 kr |
*vägledande pris
- RS-artikelnummer:
- 598-279
- Tillv. art.nr:
- TC6320K6-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | P-Channel, N channel | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | VDFN | |
| Series | TC6320 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Transistor Configuration | Complementary Pair | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Height | 1.35mm | |
| Length | 0.40mm | |
| Width | 0.31 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type P-Channel, N channel | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type VDFN | ||
Series TC6320 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Transistor Configuration Complementary Pair | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Height 1.35mm | ||
Length 0.40mm | ||
Width 0.31 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead VDFN and SOIC packages feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. This complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair uses an advanced vertical DMOS structure and a proven silicon gate manufacturing process. The combination offers the power handling capabilities of bipolar transistors along with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.
Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
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