Microchip Independent N Channel and P Channel Mosfet TC2320 1 P-Channel, N channel-Channel MOSFET Arrays, 2.1 A
- RS-artikelnummer:
- 598-027
- Tillv. art.nr:
- TC2320TG-G
- Tillverkare / varumärke:
- Microchip
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(exkl. moms)
113 487,00 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3300 + | 27,51 kr | 90 783,00 kr |
*vägledande pris
- RS-artikelnummer:
- 598-027
- Tillv. art.nr:
- TC2320TG-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | P-Channel, N channel | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Package Type | SOIC | |
| Series | TC2320 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.8V | |
| Transistor Configuration | Independent N Channel and P Channel Mosfet | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type P-Channel, N channel | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2.1A | ||
Package Type SOIC | ||
Series TC2320 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.8V | ||
Transistor Configuration Independent N Channel and P Channel Mosfet | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFET in an 8-lead SOIC package is an enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while maintaining high input impedance and a positive temperature coefficient, typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance.
Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
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