Microchip TC1550 1 P-Channel, N channel-Channel MOSFET Arrays, 350 mA, 500 V Enhancement, 8-Pin 8-Lead SOIC (TG)
- RS-artikelnummer:
- 598-873
- Tillv. art.nr:
- TC1550TG-G
- Tillverkare / varumärke:
- Microchip
Antal (1 rulle med 3300 enheter)*
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(exkl. moms)
342 810,60 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3300 + | 83,106 kr | 274 249,80 kr |
*vägledande pris
- RS-artikelnummer:
- 598-873
- Tillv. art.nr:
- TC1550TG-G
- Tillverkare / varumärke:
- Microchip
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | P-Channel, N channel | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | TC1550 | |
| Package Type | 8-Lead SOIC (TG) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 125Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.90mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Height | 1.75mm | |
| Width | 3.9 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type P-Channel, N channel | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 500V | ||
Series TC1550 | ||
Package Type 8-Lead SOIC (TG) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 125Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 4.90mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Height 1.75mm | ||
Width 3.9 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Microchip High voltage N-channel and P-channel MOSFET in an 8-lead SOIC package is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertexs proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, this device is immune to thermal runaway and thermally induced secondary breakdown, ensuring reliable performance.
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
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