Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays, 2.8 A, 240 V Enhancement, 8-Pin SOIC TD9944TG-G
- RS-artikelnummer:
- 598-332
- Tillv. art.nr:
- TD9944TG-G
- Tillverkare / varumärke:
- Microchip
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(exkl. moms)
109 164,00 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3300 + | 26,46 kr | 87 318,00 kr |
*vägledande pris
- RS-artikelnummer:
- 598-332
- Tillv. art.nr:
- TD9944TG-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 240V | |
| Series | TD9944 | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual N Channel | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Width | 3.9 mm | |
| Length | 4.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 240V | ||
Series TD9944 | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual N Channel | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Width 3.9 mm | ||
Length 4.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Microchip Dual N-Channel enhancement-mode vertical MOSFETs use Supertexs well-proven silicon-gate manufacturing process. This combination offers power handling capabilities similar to those of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even in demanding environments.
High input impedance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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