Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays, 2.8 A, 240 V Enhancement, 8-Pin SOIC TD9944TG-G
- RS-artikelnummer:
- 598-332
- Tillv. art.nr:
- TD9944TG-G
- Tillverkare / varumärke:
- Microchip
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(exkl. moms)
84 054,30 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3300 + | 20,377 kr | 67 244,10 kr |
*vägledande pris
- RS-artikelnummer:
- 598-332
- Tillv. art.nr:
- TD9944TG-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Dual N | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOIC | |
| Series | TD9944 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual N Channel | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.9mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Height | 1.75mm | |
| Width | 3.9 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Dual N | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOIC | ||
Series TD9944 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual N Channel | ||
Maximum Operating Temperature 150°C | ||
Length 4.9mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Height 1.75mm | ||
Width 3.9 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Microchip Dual N-Channel enhancement-mode vertical MOSFETs use Supertexs well-proven silicon-gate manufacturing process. This combination offers power handling capabilities similar to those of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even in demanding environments.
High input impedance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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