Infineon ISA Type N, Type P-Channel MOSFET, 7.9 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- RS-artikelnummer:
- 348-907
- Tillv. art.nr:
- ISA250300C04LMDSXTMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
103,82 kr
(exkl. moms)
129,78 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 4 000 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 180 | 5,191 kr | 103,82 kr |
| 200 - 480 | 4,939 kr | 98,78 kr |
| 500 - 980 | 4,57 kr | 91,40 kr |
| 1000 - 1980 | 4,211 kr | 84,22 kr |
| 2000 + | 4,049 kr | 80,98 kr |
*vägledande pris
- RS-artikelnummer:
- 348-907
- Tillv. art.nr:
- ISA250300C04LMDSXTMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISA | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Length | 6.2mm | |
| Width | 5 mm | |
| Standards/Approvals | IEC61249‐2‐21, JEDEC | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISA | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Length 6.2mm | ||
Width 5 mm | ||
Standards/Approvals IEC61249‐2‐21, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
Relaterade länkar
- Infineon ISA Dual N-Channel Power Transistor 40 V Enhancement, 8-Pin PG-DSO-8 ISA250250N04LMDSXTMA1
- Infineon ISA Type N 10.2 A 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Infineon ISA Type N 9.6 A 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Dual N-Channel MOSFET 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8
- Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8 BSO080P03SHXUMA1