Infineon F3L150R07W2H3B11BPSA1 IGBT Module, 85 A 650 V

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Antal (1 fack med 15 enheter)*

14 147,055 kr

(exkl. moms)

17 683,815 kr

(inkl. moms)

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15 +943,137 kr14 147,06 kr

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RS-artikelnummer:
248-1201
Tillv. art.nr:
F3L150R07W2H3B11BPSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

85 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

20 mW

Number of Transistors

4

The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device uses IGBT HighSpeed 3 technology.

Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density

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