Infineon Gate-drivare, Gate-drivare, 600 mA, 8 Ben 625 V, SOIC

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Antal (1 rör med 95 enheter)*

891,955 kr

(exkl. moms)

1 114,92 kr

(inkl. moms)

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95 - 959,389 kr891,96 kr
190 - 3807,981 kr758,20 kr
475 +7,511 kr713,55 kr

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RS-artikelnummer:
257-5578
Tillv. art.nr:
IRS2103SPBF
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

Gate-drivare

Utström

600mA

Antal ben

8

Kapseltyp

SOIC

Falltid

35ns

Typ av drivsteg

Gate-drivare

Stigtid

70ns

Minsta matningsspänning

10V

Maximal matningsspänning

625V

Minsta arbetsstemperatur

-40°C

Maximal arbetstemperatur

150°C

Serie

IRS2103

Standarder/godkännanden

RoHS

Fordonsstandard

Nej

The Infineon half bridge driver is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Floating gate driver designed for bootstrap operation

Fully operational to +600 V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply range from 10 V to 20 V

Under voltage lockout

33 V, 5 V, and 15 V logic input compatible

Cross-conduction prevention logic

Matched propagation delay for both channels

Internal set dead time

High-side output in phase with HIN input

Low-side output out of phase with LIN input

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