Infineon Gate-drivare, Gate-drivarmodul, 600 mA, 8 Ben 200 V, SOIC

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Antal (1 rulle med 2500 enheter)*

9 470,00 kr

(exkl. moms)

11 837,50 kr

(inkl. moms)

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Per enhet
Per rulle*
2500 - 25003,788 kr9 470,00 kr
5000 +3,693 kr9 232,50 kr

*vägledande pris

RS-artikelnummer:
258-4002
Tillv. art.nr:
IRS2008STRPBF
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

Gate-drivarmodul

Utström

600mA

Antal ben

8

Kapseltyp

SOIC

Falltid

30ns

Typ av drivsteg

Gate-drivare

Stigtid

170ns

Minsta matningsspänning

25V

Maximal matningsspänning

200V

Minsta arbetsstemperatur

-40°C

Maximal arbetstemperatur

150°C

Serie

IRS

Standarder/godkännanden

RoHS Compliant

Fordonsstandard

Nej

The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications.

Gate drive supplies up to 20 V per channel

Under voltage lockout for VCC, VBS

Tolerant to negative transient voltage

Designed for use with bootstrap power supplies

Cross-conduction prevention logic

Matched propagation delay for both channels

Internal set dead time

High-side output in phase with input

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