IXYS HiperFET, Q-Class N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

Se alla MOSFETs
För närvarande inte tillgänglig
Vi vet inte om den här artikeln kommer tillbaka i lager, RS har för avsikt att ta bort den från vårt utbud snart.
RS-artikelnummer:
920-0969
Tillv. art.nr:
IXFH15N100Q3
Tillverkare / varumärke:
IXYS
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247

Series

HiperFET, Q-Class

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

690 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.3mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Length

16.26mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

16.26mm

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

relaterade länkar