IXYS HiperFET, Q3-Class N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

Se alla MOSFETs
För närvarande inte tillgänglig
Vi vet inte om den här artikeln kommer tillbaka i lager, RS har för avsikt att ta bort den från vårt utbud snart.
RS-artikelnummer:
801-1443
Tillv. art.nr:
IXFR48N60Q3
Tillverkare / varumärke:
IXYS
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

600 V

Package Type

ISOPLUS247

Series

HiperFET, Q3-Class

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

154 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

140 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

5.21mm

Length

16.13mm

Transistor Material

Si

Height

21.34mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

relaterade länkar