IXYS HiperFET, Q3-Class N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-268 IXFT18N100Q3

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RS-artikelnummer:
801-1461
Tillv. art.nr:
IXFT18N100Q3
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET, Q3-Class

Package Type

TO-268

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

660 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

16.05mm

Typical Gate Charge @ Vgs

90 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

14mm

Minimum Operating Temperature

-55 °C

Height

5.1mm

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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